2.1 - 25 2.1 60 to 600 volt, 100 to 300 amp modules with internal gate drive, half-bridge configuration 4 11 r0 half-bridge, multi-chip modules in an industrial isolated package features ? internal gate drive ? isolated heat sink ? low inductance design ? fast switching speed ? low on voltage ? easy-to-connect to package description these modules are ideally suited for high density, high reliability switching applications such as motion control, ups and high power smps. these multi-chip modules incorporate in one package both the power semiconductors and the gate drive circuitry. general characteristics (per switch) @ 25c schematic omd120l60hl omd100f60hl OMD300N06HL omd240n10hl preliminary data sheet part power voltage current r ds(on) or fall number device (v)* (a) v ce(sat) time OMD300N06HL mosfet 60 300 4 m ohms - omd240n10hl mosfet 100 240 8 m ohms - omd120l60hl igbt 600 150 1.8 volts 1 s omd100f60hl igbt 600 150 2.7 volts 500 ns *other voltages available. v boot hi in lo in ++ plus supply - output return sd v logic v drive note: igbt?s have anti-parallel diodes included.
2.1 - 26 OMD300N06HL omd240n10hl omd120l60hl omd100f60hl 2.1 electrical characteristics: OMD300N06HL/per switch (t c = 25c unless otherwise specified) characteristic symbol min. typ. max. unit off characteristics drain-source breakdown voltage, i d = 1000 a, v gs = 0 v (br)dss 60 - - v zero gate voltage drain current = v gs , v ds = max. rat. i dss --50a v ds = max. rat., t j = 125c - - 500 a on characteristics static drain-source on-resistance, v gs = 10 vdc, i d = 150 a r ds(on) --4m static drain-source on-resistance t j = 100c - - 8 m dynamic characteristics output capacitance v ds = 25 v, v gs = 0, c oss - 4000 - pf reverse transfer capacitance f = 1.0 mhz c rss - 800 - pf switching characteristics turn-on delay time t d(on) - 1000 - ns rise time t r - 500 - ns turn-off delay time v dd = 30 v, i d = 300 a t d(off) - 1000 - ns fall time t f - 250 - ns source drain diode characteristics forward on-voltage v sd - - 1.1 v reverse recovery time i sd = 300 a, v gs = 0 t rr -50-ns reverse recovered charge q rr - 0.4 - c electrical characteristics: omd240n10hl/per switch (t c = 25c unless otherwise specified) characteristic symbol min. typ. max. unit off characteristics drain-source breakdown voltage, i d = 1000 a, v gs = 0 v (br)dss 100 - - v zero gate voltage drain current = v gs , v ds = max. rat. i dss - - 1000 a v ds = max. rat. x 0.8, t c = 125c - - 4000 a on characteristics static drain-source on-resistance, v gs = 10 vdc, i d = 120 a r ds(on) --8m static drain-source on-resistance t c = 100c - - 16 m dynamic characteristics output capacitance v ds = 25 v, v gs = 0, c oss - 4800 - pf reverse transfer capacitance f = 1.0 mhz c rss - 1200 - pf switching characteristics turn-on delay time t d(on) - 1000 - ns rise time v dd = 80 v, i d = 120 a t r - 300 - ns turn-off delay time r gs = 50 , v gs = 10 v t d(off) - 1000 - ns fall time t f - 250 - ns source drain diode characteristics forward on-voltage v sd - - 1.6 v reverse recovery time i sd = 240 a, v gs = 0, t rr - 180 - ns reverse recovered charge di/dt = 100 a/sec q rr -8-c
OMD300N06HL omd240n10hl omd120l60hl omd100f60hl electrical characteristics: omd120l60hl/per switch (t c = 25c unless otherwise specified) characteristic symbol min. typ. max. unit off characteristics collector emitter breakdown voltage, i c = 500 a, v ce = 0 v (br)dss 600 - - v zero gate voltage drain current, v ce = max. rat., v ge = 0 i ces - - .50 ma v ce = 0.8 max. rat., v ge = 0, t j = 125c - - 2.0 ma on characteristics collector emitter saturation voltage, v ge = 15 v, i c = 120 a, t c = 25c v ce(sat) - - 1.8 v dynamic characteristics output capacitance v ge = 0 v, v ce = 25 v, c oss - 700 - pf reverse transfer capacitance f = 1.0 mhz c rss - 200 - pf switching characteristics turn-on delay time t d(on) - 1000 - ns rise time v cc = 480 v, i c = 120 a t r - 250 - ns turn-off delay time v ge = 15 v t d(off) - 1000 - ns fall time t f - 500 - ns source drain diode characteristics maximum forward voltage i f = 120 a, t c = 25c v f - - 1.85 v i f = 120 a, t j = 125c - - 1.5 maximum reverse current v r = 600 v, t c = 25c i r - - 400 a v r = 480 v, t j = 125c - - 28 ma reverse recovery time i f = 1 a, di/dt = 200 a /s t rr --50ns v r = 30 v, t j = 25c electrical characteristics: omd100f60hl/per switch (t c = 25c unless otherwise specified) characteristic symbol min. typ. max. unit off characteristics collector emitter breakdown voltage, i c = 500 a, v ce = 0 v (br)dss 600 - - v zero gate voltage drain current, v ce = max. rat., v ge = 0 i ces - - .50 ma v ce = 0.8 max. rat., v ge = 0, t j = 125c - - 2.0 ma on characteristics collector emitter saturation voltage, v ge = 15 v, i c = 100 a, t j = 25c v ce(sat) - - 2.7 v dynamic characteristics output capacitance v ge = 0 v, v ce = 25 v, c oss - 700 - pf reverse transfer capacitance f = 1.0 mhz c rss - 200 - pf switching characteristics turn-on delay time t d(on) - 1000 - ns rise time v cc = 480 v, i c = 100 a t r - 200 - ns turn-off delay time v ge = 15 v t d(off) - 1000 - ns fall time t f - 300 - ns source drain diode characteristics maximum forward voltage i f = 120 a, t c = 25c v f - - 1.85 v i f = 120 a, t j = 125c - - 1.5 maximum reverse current v r = 600 v, t c = 25c i r - - 400 a v r = 480 v, t j = 125c - - 28 ma reverse recovery time i f = 1 a, di/dt = 200 a /s t rr --50ns v r = 30 v, t j = 25c 2.1 - 27 2.1
2.1 205 craw ford street, leominster, ma 01453 usa (508) 534-5776 fax (508) 537-4246 OMD300N06HL omd240n10hl omd120l60hl omd100f60hl mechanical outline (lp-8) 3.300 .910 1.130 .175 .050 .070 2.385 2.275 4.360 2.740 1.740 .490 3.740 .975 .213 dia. 6 plcs. 2.280 .510 .275 2.750 .620 .620 1.280 2.180 3.740 4.300 lp-8 absolute maximum ratings per switch (t c = 25c unless otherwise noted) igbt / mosfet parameters 300n06hl 240n10hl 120l60hl 100f60hl units v ces plus supply 60 100 600 600 v i c @ t c = 25c continuous drain current 300 240 150 150 a i c @ t j = 100c continuous drain current 260 180 120 100 a i c pulsed pulsed drain current 1 900 900 400 400 a junction-to-case linear derating factor 2.0 3.3 3.3 3.3 w/c junction-to-ambient linear derating factor .02 .02 .02 .02 w/c r thjc junction-to-case .50 .30 .30 .30 c/w r thja junction-to-ambient 50 50 50 50 c/w rectifier piv 60 100 600 600 v i o 300 240 120 100 a t rr 50 180 35 35 nsec gate driver v dd either chip 18 18 18 18 v v lsd to v hsd 75 100 500 500 v logic input voltage -0.3 to v l -0.3 to v l -0.3 to v l -0.3 to v l v t j 150 150 150 150 c
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